Description
Standard 100 mm (4 inch) silicon wafers – P and N type CZ-grown wafers with tight dopant control, low contaminant levels and a large standing stock in multiple resistivities and orientations. Suitable for a wide range of process, test and research applications; custom specifications available on request.
Features
- 4 inch (100 mm) diameter CZ silicon wafers
- P type (boron) and N type (antimony, phosphorus) dopants
- Resistivity range from <0.0015 to 10-20 Ohm-cm
- 525 ± 25 um standard thickness (800 um option for PG11)
- Etched or polished backside and surface options
- 2 flats, TTV ≤ 5-10 um, particle control ≤ 0.3 um
- Special specifications and new standards available on request
Typical Specifications
| Control No. | Type | Dopant | Resistivity (Ohm-cm) | Thickness (um) | Surface | TTV (um) | Flats |
|---|---|---|---|---|---|---|---|
| PG06 | P | Boron | 1-8 | 525±25 | Etched | ≤5 | 2 Flats |
| PG07 | P | Boron | 0.001-0.005 | 525±25 | Etched | ≤10 | 2 Flats |
| PG08 | P | Boron | 0.01-0.02 | 525±25 | Etched | ≤10 | 2 Flats |
| PG09 | P | Boron | 10-20 | 525±25 | Etched | ≤10 | 2 Flats |
| PG10 | P | Boron | 1-15 | 525±25 | Etched | ≤10 | 2 Flats |
| PG11 | P | Boron | <0.0015 | 800±25 | Etched | ≤10 | 2 Flats |
| PG12 | N | Antimony | 0.01-0.05 | 525±25 | Etched | ≤10 | 2 Flats |
| PG13 | N | Antimony | 0.007-0.025 | 525±25 | Etched | ≤5 | 2 Flats |
| PG14 | N | Phosphorus | 0.001-0.005 | 525±25 | Etched | ≤5 | 2 Flats |
| PG15 | N | Phosphorus | 1-5 | 525±25 | Polished | ≤10 | 2 Flats |
Wafers ship in our single wafer carrier boxes and multi-wafer storage boxes – see related products below.
Look –
Looking great